Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity

We studied the magnetic properties of ferromagnetic-semiconductor composites based on nickel and porous-GaN, motivated by effort to couple semiconductor functionality. Nickel-infiltrated nickel-coated (laminated thin-film) porous GaN structures were fabricated electrodeposition, their subsequently examined collectively, vibrating sample magnetometry nanoscale, force microscopy. successfully demonstrated ability realize infiltrated GaN, where dominated material without a measurable surface contribution. found that structure magnetization electrodeposited porous-GaN/Ni depended degree porosity amount deposited nickel. The evolves from nearly isotropic response in structures, shape-anisotropy controlled thin-film behaviour. Furthermore, both have low (< 0.1%) strain corresponding coercivity: < 6.4 2.4 kA/m for thin-film, correspondingly. An unconventional trend increased remanence at room temperature, compared cryogenic was observed thin film. most likely cause these findings is compliance bulk, allowing relaxation temperature. These results encourage deeper investigation nanostructure property tuning coupling similar materials.